The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2013

Filed:

Jul. 07, 2011
Applicants:

Mayu Aoki, Kokubunji, JP;

Kenichi Takeda, Higashimurayama, JP;

Kazuyuki Hozawa, Hino, JP;

Inventors:

Mayu Aoki, Kokubunji, JP;

Kenichi Takeda, Higashimurayama, JP;

Kazuyuki Hozawa, Hino, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including two silicon wafers stacked and bonded together with bumps of one wafer electrically coupled with those of the other wafer, in which generation of voids on the junction surface between the silicon wafers is suppressed. Due to a recess made in the surface of a buried conductive film, a cavity is formed in the junction surface between the silicon wafers. The ends of the cavity extend to the periphery of the junction surface between the silicon wafers. This allows the air trapped on the junction surface between the silicon wafers to get out through the cavity, thereby reducing the possibility of generation of voids on the junction surface.


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