The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Sep. 07, 2010
Alexander B. Lostetter, Fayetteville, AR (US);
Jared Hornberger, Springdale, AR (US);
Takukazu Otsuka, Kyoto, JP;
Alexander B. Lostetter, Fayetteville, AR (US);
Jared Hornberger, Springdale, AR (US);
Takukazu Otsuka, Kyoto, JP;
Arkansas Power Electronics International, Inc., Fayetteville, AR (US);
Rohm Co., Ltd., , JP;
Abstract
Provided are a semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: a source trace, a drain trace, and a gate trace placed on a substrate; a transistor which is placed on the drain trace and includes a source pad and a gate pad; insulating films placed between the drain and source traces and between the drain and gate traces on the substrate so as to cover sidewall surfaces of the transistor; a source spray electrode which is placed on the insulating film between the source and drain traces and connects the source pad of the transistor and the source trace; and a gate spray electrode placed on the insulating film between the gate and drain traces and connects the gate pad of the transistor and the gate trace.