The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Sep. 20, 2010
Takeshi Araki, Tokyo, JP;
Takeshi Yamaguchi, Kanagawa-ken, JP;
Mariko Hayashi, Tokyo, JP;
Kohichi Kubo, Kanagawa-ken, JP;
Takayuki Tsukamoto, Kanagawa-ken, JP;
Takeshi Araki, Tokyo, JP;
Takeshi Yamaguchi, Kanagawa-ken, JP;
Mariko Hayashi, Tokyo, JP;
Kohichi Kubo, Kanagawa-ken, JP;
Takayuki Tsukamoto, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.