The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Mar. 06, 2006
Tatsuya Tanabe, Itami, JP;
Kouhei Miura, Osaka, JP;
Makoto Kiyama, Itami, JP;
Takashi Sakurada, Osaka, JP;
Tatsuya Tanabe, Itami, JP;
Kouhei Miura, Osaka, JP;
Makoto Kiyama, Itami, JP;
Takashi Sakurada, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be reduced. In a high electron mobility transistor, a supporting substrateis composed of AlN, AlGaN, or GaN, specifically. An AlGaN epitaxial layerhas a full-width-at-half maximum of (0002) plane XRD of 150 sec or less. A GaN epitaxial layeris provided between the gallium nitride supporting substrate and the AlGaN epitaxial layer (0<Y≦1). A Schottky electrodeis provided on the AlGaN epitaxial layer. The Schottky electrodeconstitutes a gate electrode of the high electron mobility transistor. The source electrodeis provided on the gallium nitride epitaxial layer. The drain electrodeis provided on the gallium nitride epitaxial layer
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile