The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Dec. 18, 2008
Sang Won Kang, Suwon, KR;
Seong Ju Park, Gwangju, KR;
Joo Young Cho, Gwangju, KR;
IL Kyu Park, Eumseong-gun, KR;
Yong Chun Kim, Seongnam, KR;
Dong Joon Kim, Suwon, KR;
Jeong Tak OH, Yongin, KR;
Je Won Kim, Seoul, KR;
Sang Won Kang, Suwon, KR;
Seong Ju Park, Gwangju, KR;
Joo Young Cho, Gwangju, KR;
Il Kyu Park, Eumseong-gun, KR;
Yong Chun Kim, Seongnam, KR;
Dong Joon Kim, Suwon, KR;
Jeong Tak Oh, Yongin, KR;
Je Won Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.