The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2013

Filed:

Mar. 30, 2011
Applicants:

Kunihiro Matsuda, Hachioji, JP;

Hiroshi Matsumoto, Higashiyamato, JP;

Yukikazu Tanaka, Fussa, JP;

Inventors:

Kunihiro Matsuda, Hachioji, JP;

Hiroshi Matsumoto, Higashiyamato, JP;

Yukikazu Tanaka, Fussa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/76 (2006.01); H01L 21/02 (2006.01); H01L 31/062 (2012.01); G11C 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed in a semiconductor device including a substrate, a first transistor, a second transistor, and a first source electrode and a first drain electrode of the first transistor are arranged along a first direction and a second source electrode and a second drain electrode of the second transistor are arranged in a reverse order of the first source electrode and the first drain electrode along the first direction, the first source electrode and the second source electrode are connected by a source connecting wiring, the first drain electrode and the second drain electrode are connected by a drain connecting wiring, a first gate electrode and a second gate electrode are connected by a gate connecting wiring and the source connecting wiring and the drain connecting wiring are provided at positions except a region overlapped with the first gate electrode, the second gate electrode and the gate connecting wiring.


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