The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Aug. 01, 2008
Ken Nakahara, Tokyo, JP;
Hiroyuki Yuji, Kyoto, JP;
Kentaro Tamura, Kyoto, JP;
Shunsuke Akasaka, Kyoto, JP;
Masashi Kawasaki, Miyagi, JP;
Akira Ohtomo, Miyagi, JP;
Atsushi Tsukazaki, Miyagi, JP;
Ken Nakahara, Tokyo, JP;
Hiroyuki Yuji, Kyoto, JP;
Kentaro Tamura, Kyoto, JP;
Shunsuke Akasaka, Kyoto, JP;
Masashi Kawasaki, Miyagi, JP;
Akira Ohtomo, Miyagi, JP;
Atsushi Tsukazaki, Miyagi, JP;
Rohm Co., Ltd., Kyoto-Fu, JP;
Abstract
A p-type MgZnO-based thin film () is formed on a substrate () made of a ZnO-based semiconductor. The p-type MgZnO-based thin film () is composed so that X as a ratio of Mg with respect to Zn therein can be 0≦X<1, preferably 0≦X≦0.5. In the p-type MgZnO thin film (), nitrogen as p-type impurities which become an acceptor is contained at a concentration of approximately 5.0×10cmor more. The p-type MgZnO thin film () is composed so that n-type impurities made of a group IV element such as silicon that becomes a donor can have a concentration of approximately 1.0×10cmor less. The p-type MgZnO thin film () is composed so that n-type impurities made of a group III element such as boron and aluminum which become a donor can have a concentration of approximately 1.0×10cmor less.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile