The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8410427 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 02, 2013

Filed:

Jun. 17, 2011
Applicant:

Yasutaka Takeuchi, Aichi-gun, JP;

Inventor:

Yasutaka Takeuchi, Aichi-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 49/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present teachings provide a method for manufacturing a semiconductor device including a semiconductor substrate and a lower surface electrode in which an aluminum containing layer, a titanium layer, a nickel layer, and a nickel oxidation-prevention layer are laminated in order from a semiconductor substrate side, wherein the titanium layer of the lower electrode is formed by sputtering in an atmosphere of a partial pressure of oxygen being equal to or less than 5×10Pa.


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Takeuchi, Yasutaka. (2013). Semiconductor device, method for manufacturing semiconductor device, apparatus for manufacturing semiconductor device, and method for evaluating semiconductor device (U.S. Patent No. 8410427). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8410427

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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