The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Jun. 10, 2010
Mark Joseph Bennahmias, Ladera Ranch, CA (US);
Michael John Zani, Laguna Niguel, CA (US);
Jeffrey Winfield Scott, Santa Barbara, CA (US);
Mark Joseph Bennahmias, Ladera Ranch, CA (US);
Michael John Zani, Laguna Niguel, CA (US);
Jeffrey Winfield Scott, Santa Barbara, CA (US);
NexGen Semi Holding, Inc., Laguna Niguel, CA (US);
Abstract
Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlOas a gate tunneling dielectric. Other types of memory devices (DIMMS, DRAM, and DDR) made with patterned ALD of LaAlOas a gate dielectric are also possible.