Non-volatile semiconductor memory device and method of manufacturing the same

Abstract

Provided is a nonvolatile semiconductor memory device highly integrated and highly reliable. A plurality of memory cells are formed in a plurality of active regions sectioned by a plurality of isolations (silicon oxide films) extending in the Y direction and deeper than a well (p type semiconductor region). In each memory cell, a contact is provided in the well (p type semiconductor region) so as to penetrate through a source diffusion layer (ntype semiconductor region), and the contact that electrically connects bit lines (metal wirings) and the source diffusion layer (ntype semiconductor region) is also electrically connected to the well (p type semiconductor region).