The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Sep. 15, 2011
Kap-soo Yoon, Seoul, KR;
Sung-hoon Yang, Seoul, KR;
Byoung-june Kim, Seoul, KR;
Czang-ho Lee, Suwon-si, KR;
Sung-ryul Kim, Cheonan-si, KR;
Hwa-yeul OH, Seoul, KR;
Jae-ho Choi, Seoul, KR;
Yong-mo Choi, Osan-si, KR;
Kap-Soo Yoon, Seoul, KR;
Sung-Hoon Yang, Seoul, KR;
Byoung-June Kim, Seoul, KR;
Czang-Ho Lee, Suwon-si, KR;
Sung-Ryul Kim, Cheonan-si, KR;
Hwa-Yeul Oh, Seoul, KR;
Jae-Ho Choi, Seoul, KR;
Yong-Mo Choi, Osan-si, KR;
Samsung Display Co., Ltd., , KR;
Abstract
A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cmto about 0.3 mole/cmof a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cmto about 0.3 mole/cmof 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.