The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Jul. 30, 2009
Wen LI, Clifton Park, NY (US);
Jonathan D. Short, Saratoga Springs, NY (US);
George E. Possin, Niskayuna, NY (US);
Wen Li, Clifton Park, NY (US);
Jonathan D. Short, Saratoga Springs, NY (US);
George E. Possin, Niskayuna, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer.