The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Feb. 28, 2011
Applicants:
Mingwei Zhu, Sunnyvale, CA (US);
Vivek Agrawal, Fremont, CA (US);
Nag B. Patibandla, Pleasanton, CA (US);
Omkaram Nalamasu, San Jose, CA (US);
Inventors:
Mingwei Zhu, Sunnyvale, CA (US);
Vivek Agrawal, Fremont, CA (US);
Nag B. Patibandla, Pleasanton, CA (US);
Omkaram Nalamasu, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/005 (2006.01);
U.S. Cl.
CPC ...
Abstract
Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
Zhu, Mingwei. (2013). Gallium nitride-based led fabrication with pvd-formed aluminum nitride buffer layer (U.S. Patent No. 8409895). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8409895
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile