The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Aug. 25, 2008
Keiichi Sasaki, Oita, JP;
Yukihiro Hayakawa, Yokohama, JP;
Keiichi Sasaki, Oita, JP;
Yukihiro Hayakawa, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A through-hole forming method includes steps of forming a first impurity region () around a region where a through-hole is to be formed in the first surface of a silicon substrate (), the first impurity region () being higher in impurity concentration than the silicon substrate (), forming a second impurity region () at a position adjacent to the first impurity region () in the depth direction of the silicon substrate (), the second impurity region () being higher in impurity concentration than the first impurity region (), forming an etch stop layer () on the first surface, forming an etch mask layer () having an opening on the second surface of the silicon substrate () opposite to the first surface, and etching the silicon substrate () until at least the etch stop layer () is exposed via the opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile