The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Jun. 22, 2010
Mitsuhiko Ogihara, Gunma, JP;
Tomohiko Sagimori, Gunma, JP;
Masaaki Sakuta, Tokyo, JP;
Akihiro Hashimoto, Fukui, JP;
Mitsuhiko Ogihara, Gunma, JP;
Tomohiko Sagimori, Gunma, JP;
Masaaki Sakuta, Tokyo, JP;
Akihiro Hashimoto, Fukui, JP;
Oki Data Corporation, Tokyo, JP;
Abstract
In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer.