The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2013

Filed:

Oct. 12, 2010
Applicant:

Shingo Masui, Anan, JP;

Inventor:

Shingo Masui, Anan, JP;

Assignee:

Nichia Corporation, Anan-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/125 (2006.01); H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nitride semiconductor laser element includes a laminate. The laminate includes on a substrate a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer, and constitutes a cavity resonator. The laminate includes an element region, an exposed region and an island layer. The element region is a region in which the laser element is formed. The exposed region is a region in which at least the first conductivity type nitride semiconductor layer is exposed on both sides of the element region in the cavity direction, and which is provided continuously in a cavity resonating direction of the laser element. The island layer is separated from the element region by the exposed region, and that is disposed in a corner of the nitride semiconductor laser element.


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