The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2013

Filed:

Dec. 28, 2010
Applicants:

Tsutomu Chou, Tokyo, JP;

Yoshihiro Tsuchiya, Tokyo, JP;

Hironobu Matsuzawa, Tokyo, JP;

Hayato Koike, Tokyo, JP;

Inventors:

Tsutomu Chou, Tokyo, JP;

Yoshihiro Tsuchiya, Tokyo, JP;

Hironobu Matsuzawa, Tokyo, JP;

Hayato Koike, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetoresistive effect element (MR element) includes first and second magnetic layers of which relative angles formed by magnetization directions change in relation to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned on a side closer than the second magnetic layer in regards to a substrate above which the magnetoresistive effect element is formed, and the spacer layer includes a main spacer layer made of gallium oxide as the primary component, and a first nonmagnetic layer positioned between the main spacer layer and the first magnetic layer and contains copper and gallium.


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Chou, Tsutomu. (2013). Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layer (U.S. Patent No. 8405935). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8405935

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