The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2013

Filed:

Apr. 06, 2011
Applicants:

Der-chun Wu, New Taipei, TW;

Yu-hsien Chen, Kaohsiung, TW;

Sheng-fa Liu, Hsinchu County, TW;

Inventors:

Der-Chun Wu, New Taipei, TW;

Yu-Hsien Chen, Kaohsiung, TW;

Sheng-Fa Liu, Hsinchu County, TW;

Assignee:

Chunghwa Picture Tubes, Ltd., Bade, Taoyuan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor (TFT) array substrate includes a substrate having a plurality of normal alignment regions, a plurality of abnormal alignment regions, and a device region defined thereon, a plurality of scan lines, a plurality of data lines, a plurality of storage electrode lines, and a plurality of switch devices positioned in the device region, a plurality of alignment structures positioned in the abnormal alignment regions, and an alignment layer formed on the substrate and the alignment structures. The alignment layer further includes a plurality of first alignment slits covering the alignment structures in the abnormal alignment regions and a plurality of second alignment slits in the normal alignment regions. A depth and a width of the second alignment slits are identical to a depth and a width of the first alignment slits.


Find Patent Forward Citations

Loading…