Semiconductor device comprising multilayer interconnect structure with overlapping vias

Abstract

A semiconductor device having a multilayer interconnect structure allowing heat in an interconnect layer at an intermediate level to be effectively dissipated is provided. A lower-layer interconnect (), an intermediate interconnect (), an upper-layer interconnect (), a first contact via () formed to electrically connect the lower-layer interconnect () to the intermediate interconnect (), and a second contact via () formed to electrically connect the intermediate interconnect () to the upper-layer interconnect () are provided. When viewed from above, the first and second contact vias () both have a rectangular shape with their long sides extending in the same direction, and overlap with each other.