The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Jun. 13, 2011
Woojin Kim, Yongin-si, KR;
Sechung OH, Suwon-si, KR;
Jangeun Lee, Suwon-si, KR;
Jeahyoung Lee, Seoul, KR;
Junho Jeong, Suwon-si, KR;
Woo Chang Lim, Hwaseong-si, KR;
Woojin Kim, Yongin-si, KR;
Sechung Oh, Suwon-si, KR;
Jangeun Lee, Suwon-si, KR;
Jeahyoung Lee, Seoul, KR;
Junho Jeong, Suwon-si, KR;
Woo Chang Lim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.