The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Aug. 02, 2011
Daisuke Shibata, Kyoto, JP;
Tatsuo Morita, Kyoto, JP;
Manabu Yanagihara, Osaka, JP;
Yasuhiro Uemoto, Toyama, JP;
Daisuke Shibata, Kyoto, JP;
Tatsuo Morita, Kyoto, JP;
Manabu Yanagihara, Osaka, JP;
Yasuhiro Uemoto, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a semiconductor layer stack formed on a substrate, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor layer stack, and are spaced from each other, a first control layer formed between the first ohmic electrode and the second ohmic electrode, and a first gate electrode formed on the first control layer. The first control layer includes a lower layer, an intermediate layer which is formed on the lower layer, and has lower impurity concentration than the lower layer, and an upper layer which is formed on the intermediate layer, and has higher impurity concentration than the intermediate layer.