The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Apr. 27, 2011
Joon Seop Kwak, Hwaseong-si, KR;
Tae Yeon Seong, Gwanju-si, KR;
Jae Hee Cho, Yongin-si, KR;
June-o Song, Gwanju-si, KR;
Dong Seok Leem, Gwanju-si, KR;
Hyun Soo Kim, Yongin-si, KR;
Joon Seop Kwak, Hwaseong-si, KR;
Tae Yeon Seong, Gwanju-si, KR;
Jae Hee Cho, Yongin-si, KR;
June-o Song, Gwanju-si, KR;
Dong Seok Leem, Gwanju-si, KR;
Hyun Soo Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.