The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2013

Filed:

Mar. 31, 2011
Applicants:

Ching-lin Fan, Keelung, TW;

Yu-zuo Lin, Hsinchu, TW;

Chao-hung Huang, New Taipei, TW;

Inventors:

Ching-Lin Fan, Keelung, TW;

Yu-Zuo Lin, Hsinchu, TW;

Chao-Hung Huang, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 51/00 (2006.01); H01L 29/76 (2006.01); H01L 31/112 (2006.01); H01L 29/15 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.


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