The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Dec. 06, 2010
Jun Shimizu, Toyama, JP;
Shinichi Kohda, Kyoto, JP;
Yasuhiro Yamada, Hyogo, JP;
Naohide Wakita, Osaka, JP;
Masahiro Ishida, Osaka, JP;
Jun Shimizu, Toyama, JP;
Shinichi Kohda, Kyoto, JP;
Yasuhiro Yamada, Hyogo, JP;
Naohide Wakita, Osaka, JP;
Masahiro Ishida, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride semiconductor element includes: a strain suppression layer formed on a silicon substrate via an initial layer; and an operation layer formed on the strain suppression layer. The strain suppression layer includes a first spacer layer, a second spacer layer formed on and in contact with the first spacer layer, and a superlattice layer formed on and in contact with the second spacer layer. The first spacer layer is larger in lattice constant than the second spacer layer. The superlattice layer has first layers and second layers smaller in lattice constant than the first layers stacked alternately on top of one another. The average lattice constant of the superlattice layer is smaller than the lattice constant of the first spacer layer and larger than the lattice constant of the second spacer layer.