The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Mar. 05, 2007
Applicants:
Huaxiang Yin, Yongin-si, KR;
Young-soo Park, Yongin-si, KR;
Wenxu Xianyu, Yongin-si, KR;
Hans S. Cho, Yongin-si, KR;
Inventors:
Huaxiang Yin, Yongin-si, KR;
Young-soo Park, Yongin-si, KR;
Wenxu Xianyu, Yongin-si, KR;
Hans S. Cho, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a poly-silicon pattern may include forming an amorphous silicon pattern on a lower layer; forming a capping layer on the substrate covering the amorphous silicon pattern; poly-crystallizing the amorphous silicon pattern using an excimer laser annealing process; and removing the capping layer.
Yin, Huaxiang. (2013). Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device (U.S. Patent No. 8405062). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8405062
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile