The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Feb. 12, 2008
Satoshi Tokuda, Kasatsu, JP;
Hiroyuki Kishihara, Kizugawa, JP;
Masatomo Kaino, Kyoto, JP;
Tamotsu Okamoto, Kisarazu, JP;
Satoshi Tokuda, Kasatsu, JP;
Hiroyuki Kishihara, Kizugawa, JP;
Masatomo Kaino, Kyoto, JP;
Tamotsu Okamoto, Kisarazu, JP;
Shimadzu Corporation, Kyoto, JP;
Institute of National Colleges of Technology, Japan, Tokyo, JP;
Abstract
A radiation detector of this invention includes a Cl-doped CdTe or Cl-doped CdZnTe polycrystalline semiconductor film in which defect levels in crystal grains are protected. This is obtained by grinding CdTe or CdZnTe crystal doped with Cl, and preparing the polycrystalline semiconductor film again by using its powder as the source. The defect levels of crystal grain boundaries in the polycrystalline semiconductor film are also protected by further doping the polycrystalline semiconductor film prepared again with Cl. These features enable manufacture of the radiation detector which has excellent sensitivity and response to radiation.