The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Nov. 17, 2011
Youichi Machii, Tsukuba, JP;
Masato Yoshida, Tsukuba, JP;
Takeshi Nojiri, Tsukuba, JP;
Kaoru Okaniwa, Tsukuba, JP;
Mitsunori Iwamuro, Tsukuba, JP;
Shuuichirou Adachi, Tsukuba, JP;
Akihiro Orita, Tsukuba, JP;
Tetsuya Satou, Tsukuba, JP;
Keiko Kizawa, Tsukuba, JP;
Youichi Machii, Tsukuba, JP;
Masato Yoshida, Tsukuba, JP;
Takeshi Nojiri, Tsukuba, JP;
Kaoru Okaniwa, Tsukuba, JP;
Mitsunori Iwamuro, Tsukuba, JP;
Shuuichirou Adachi, Tsukuba, JP;
Akihiro Orita, Tsukuba, JP;
Tetsuya Satou, Tsukuba, JP;
Keiko Kizawa, Tsukuba, JP;
Hitachi Chemical Company, Ltd., Tokyo, JP;
Abstract
The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.