The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Jan. 05, 2011
Jongwon Hong, Hwaseong-si, KR;
Geumjung Seong, Seoul, KR;
Jongmyeong Lee, Seongnam-si, KR;
Hyunbae Lee, Seoul, KR;
Bonghyun Choi, Yongin-si, KR;
Jongwon Hong, Hwaseong-si, KR;
GeumJung Seong, Seoul, KR;
Jongmyeong Lee, Seongnam-si, KR;
Hyunbae Lee, Seoul, KR;
Bonghyun Choi, Yongin-si, KR;
Abstract
In a semiconductor device and a method of forming the same, the semiconductor device comprises: a first insulating layer on an underlying contact region of the semiconductor device, the first insulating layer having an upper surface; a first conductive pattern in a first opening through the first insulating layer, an upper portion of the first conductive pattern being of a first width, an upper surface of the first conductive pattern being recessed relative to the upper surface of the first insulating layer so that the upper surface of the first conductive pattern has a height relative to the underlying contact region that is less than a height of the upper surface of the first insulating layer relative to the underlying contact region; and a second conductive pattern contacting the upper surface of the first conductive pattern, a lower portion of the second conductive pattern being of a second width that is less than the first width.