The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Apr. 06, 2010
Andrew J. Kellock, Sunnyvale, CA (US);
Christian Lavoie, Pleasantville, NY (US);
Ahmet Ozcan, Pleasantville, NY (US);
Stephen Rossnagel, Pleasantville, NY (US);
Bin Yang, Ossining, NY (US);
Zhen Zhang, Ossining, NY (US);
Yu Zhu, West Harrison, NY (US);
Stefan Zollner, Hopewell Junction, NY (US);
Andrew J. Kellock, Sunnyvale, CA (US);
Christian Lavoie, Pleasantville, NY (US);
Ahmet Ozcan, Pleasantville, NY (US);
Stephen Rossnagel, Pleasantville, NY (US);
Bin Yang, Ossining, NY (US);
Zhen Zhang, Ossining, NY (US);
Yu Zhu, West Harrison, NY (US);
Stefan Zollner, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., , KY;
Abstract
A method for forming a silicide contact includes depositing a metal layer on silicon such that the metal layer intermixes with the silicon to form an intermixed region on the silicon; removing an unintermixed portion of the metal layer from the intermixed region; and annealing the intermixed region to form a silicide contact on the silicon. A semiconductor device comprising a silicide contact located over a silicon layer of the semiconductor device, the silicide contact comprising nickel (Ni) and silicon (Si) and having Ni amount equivalent to a thickness of about 21 angstroms or less.