The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Jun. 01, 2012
Akio Matsushita, Kyoto, JP;
Akihiro Itoh, Kyoto, JP;
Tohru Nakagawa, Shiga, JP;
Hidetoshi Ishida, Osaka, JP;
Akio Matsushita, Kyoto, JP;
Akihiro Itoh, Kyoto, JP;
Tohru Nakagawa, Shiga, JP;
Hidetoshi Ishida, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A method for generating electric power including the steps of: (a) preparing a solar cell having a condensing lens and a solar cell element, wherein the solar cell element includes an n-type GaAs layer, a p-type GaAs layer, a quantum tunneling layer, an n-type InGaP layer, a p-type InGaP layer, a p-type window layer, an n-side electrode, and a p-side electrode, and satisfies the following equation (I): d<d, d<d, nanometer≦d≦4 nanometers, 1 nanometer≦d≦4 nanometers, d<d, d<d, 1 nanometer≦d5 nanometers, 1 nanometer≦d≦5 nanometers, 100 nanometers≦w, 100 nanometers≦w, 100 nanometers≦w, and 100 nanometers≦w. . . (I); and (b) irradiating a region S which is included in the surface of the p-type window layer through the condensing lens with light to satisfy the following equation (II) in order to generate a potential difference between the n-side electrode and the p-side electrode: w≦w. . . (II).