The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Aug. 07, 2009
Hirohisa Amago, Kanagawa, JP;
Nobuhiko Umezu, Kanagawa, JP;
Hirohisa Amago, Kanagawa, JP;
Nobuhiko Umezu, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of forming a semiconductor thin film includes: a step of forming an amorphous semiconductor thin film over a transparent substrate; a step of forming a crystalline semiconductor thin film by irradiating the amorphous semiconductor thin film with laser light to provide heat treatment and thereby crystallizing the amorphous semiconductor thin film; and an inspection step of inspecting the crystalline semiconductor thin film. The inspection step includes a step of obtaining a transmission image of the crystalline semiconductor thin film by irradiating the crystalline semiconductor thin film with light from a rear side of the transparent substrate and taking an image, and a screening step of performing screening of the crystalline semiconductor thin film based on the obtained transmission image.