The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8404145 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 26, 2013

Filed:

Jun. 21, 2010
Applicants:

Maurice Mcglashan-powell, Mount Vernon, NY (US);

Eugene J. O'sullivan, Nyack, NY (US);

Daniel C. Edelstein, White Plains, NY (US);

Inventors:

Maurice McGlashan-Powell, Mount Vernon, NY (US);

Eugene J. O'Sullivan, Nyack, NY (US);

Daniel C. Edelstein, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An indium cap layer is formed by blanket depositing indium onto a surface of metallic interconnects separated by interlayer dielectric, and then selectively chemically etching the indium located on the interlayer dielectric leaving an indium cap layer. Etchants containing a strong acid are provided for selectively removing the indium.


Find Patent Forward Citations

McGlashan-Powell, Maurice. (2013). Method for forming an indium cap layer (U.S. Patent No. 8404145). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8404145

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…