The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2013

Filed:

Aug. 25, 2009
Applicants:

Ken Sakuma, Sakura, JP;

Kensuke Ogawa, Sakura, JP;

Kazuhiro Goi, Sakura, JP;

Yong Tsong Tan, Sakura, JP;

Ning Guan, Sakura, JP;

Mingbin Yu, Singapore, SG;

Hwee Gee Teo, Singapore, SG;

Guo-qiang Lo, Singapore, SG;

Inventors:

Ken Sakuma, Sakura, JP;

Kensuke Ogawa, Sakura, JP;

Kazuhiro Goi, Sakura, JP;

Yong Tsong Tan, Sakura, JP;

Ning Guan, Sakura, JP;

Mingbin Yu, Singapore, SG;

Hwee Gee Teo, Singapore, SG;

Guo-Qiang Lo, Singapore, SG;

Assignee:

Fujikura Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a planar optical waveguide device of which a core includes a plurality of alternatively arranged fin portions and valley portions to form a grating structure, in which the core widths of the valley portions vary along the longitudinal direction, the method including: a high refractive index material layer forming step of forming a high refractive index material layer; a photoresist layer forming step of forming a photoresist layer on the high refractive index material layer; a first exposure step of forming shaded portions on the photoresist layer using a phase-shifting photomask; a second exposure step of forming shaded portions on the photoresist layer using a binary photomask; a development step of developing the photoresist layer; and an etching step of etching the high refractive index material layer using the photoresist pattern resulted from the development step.


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