The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2013

Filed:

Jul. 06, 2010
Applicants:

Yadong Jiang, Chengdu, CN;

Tao Wang, Chengdu, CN;

Deen Gu, Chengdu, CN;

Kai Yuan, Chengdu, CN;

Inventors:

Yadong Jiang, Chengdu, CN;

Tao Wang, Chengdu, CN;

Deen Gu, Chengdu, CN;

Kai Yuan, Chengdu, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 13/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A metal vanadium film is used as an extraction electrode contacting with a vanadium oxide or doped vanadium oxide film. The electrode material is adapted for a detector, sensor and optical switch based on a vanadium oxide or doped vanadium oxide film. The metal vanadium film is in favor of reducing the thermal conductivity of the support structure of the array unit. The preparation process of the vanadium film using the metal vanadium as the source material is more easily controlled than that of NiCr film using the NiCr alloy as the source material. The extraction electrode of the present invention easily obtains an excellent metal-semiconductor contact characteristic. The preparation process and patterning process of the metal vanadium film have an excellent technology compatibility with the IC and MEMS manufacturing processes.


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