The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Mar. 23, 2011
Naohiro Matsukawa, Yokohama, JP;
Naohiro Matsukawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of evaluating a semiconductor storage device of a floating gate type has calculating an electron density distribution of a tunnel insulating film of a memory cell by multiplying a change rate of a threshold voltage Vt of the memory cell of the semiconductor storage device with respect to the change of the logarithm of a time with ε*Cr*2k/Tox/q (where ε is the permittivity of the tunnel insulating film of the memory cell, Cr indicates a coupling ratio of the memory cell, Tox indicates the thickness of the tunnel insulating film, k indicates an attenuation rate of the existence probability when the charges are detrapped and is represented as k=(2mE/(h/2π)), m indicates the mass of the electron, E indicates an energy level of the trap of the tunnel insulating film, h indicates a Planck's constant, and π indicates a circumference ratio).