The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Jan. 26, 2011
Masato Endo, Kanagawa-ken, JP;
Masato Endo, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a first circuit unit having first and second interconnects, a second circuit unit having third and fourth interconnects, and an intermediate unit provided therebetween and having first and second transistors juxtaposed to each other along a direction perpendicular to a direction from the first circuit unit toward the second circuit unit. A high impurity concentration region in a first connection region of one diffusion layer of the first transistor is connected to the first interconnect, and other diffusion layer is connected to the third interconnect. A distance from the first connection region to a gate is longer than a distance from the second connection region to a gate. An midpoint region with a narrower width than the first connection region is provided between the gate and the first connection region of the one diffusion layer of the first transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile