The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Sep. 17, 2010
Hiroyuki Kutsukake, Kanagawa-ken, JP;
Kenji Gomikawa, Kanagawa-ken, JP;
Yoshiko Kato, Kanagawa-ken, JP;
Norihisa Arai, Saitama-ken, JP;
Tomoaki Hatano, Kanagawa-ken, JP;
Hiroyuki Kutsukake, Kanagawa-ken, JP;
Kenji Gomikawa, Kanagawa-ken, JP;
Yoshiko Kato, Kanagawa-ken, JP;
Norihisa Arai, Saitama-ken, JP;
Tomoaki Hatano, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate, an element isolation insulating film dividing an upper portion of the substrate into a plurality of first active regions, a source layer and a drain layer, a gate electrode, a gate insulating film, a first punch-through stopper layer, and a second punch-through stopper layer. The source layer and the drain layer are formed in spaced to each other in an upper portion of each of the first active regions. The first punch-through stopper layer is formed in a region of the first active region directly below the source layer and the second punch-through stopper layer is formed in a region of the first active region directly below the drain layer. The first punch-through stopper layer and the second punch-through stopper layer each has an effective impurity concentration higher than the semiconductor substrate. The first punch-through stopper layer and the source layer are separated in the channel region. The second punch-through stopper layer and the drain layer are separated in the channel region.