The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2013

Filed:

May. 28, 2010
Applicants:

Albert Birner, Regensburg, DE;

Uwe Hoeckele, Regensburg, DE;

Thomas Kunstmann, Laaber, DE;

Uwe Seidel, Munich, DE;

Inventors:

Albert Birner, Regensburg, DE;

Uwe Hoeckele, Regensburg, DE;

Thomas Kunstmann, Laaber, DE;

Uwe Seidel, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening.


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