The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Aug. 12, 2009
Hiroharu Shimizu, Tokyo, JP;
Hiroharu Shimizu, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
To provide a technique that can maintain uniformity of semiconductor elements and wirings microfabricated, while maintaining the mounting efficiency of circuit cells onto a chip. Respective gate electrodes of an n-channel type MISFET and another n-channel type MISFET forming a NAND circuit cell are coupled to the same node, and simultaneously perform respective on-off operations according to the same input signal. These n-channel type MISFETs are arranged adjacent to each other, and electrically coupled in series. Respective gate electrodes of a p-channel type MISFET and another p-channel type MISFET forming the NAND circuit cell are coupled to the same node, and simultaneously perform respective on-off operations according to the same input signal. These p-channel type MISFETs are arranged adjacent to each other, and electrically coupled in series.