The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Jan. 09, 2009
Yukio Shakuda, Kyoto, JP;
Yukio Shakuda, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
Provided is a semiconductor light emitting device which includes a number of hexagon-shaped semiconductor light emitting elements formed two-dimensionally, and in which the positive electrodes and the negative electrodes are formed on its light outputting surface side lest the light outputting efficiency should decrease. A maskfor selective growth is formed on a substratefor growth, and an AlN buffer layeris formed in regions from each of which a part of the maskfor selective growth is removed. An undoped GaN layer, an n-type GaN layer, an active layerand a p-type GaN layerare sequentially stacked on the AlN buffer layer. An isolation groove A for isolating the elements from one another is formed. A p-electrodeand an n-electrodeof each semiconductor light emitting element D are formed on its hexagon-shaped light outputting surface side, and the p-electrodes or n-electrodes of each two neighboring semiconductor light emitting elements are arranged adjacent to each other with the isolation groove A in between.