The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Jun. 11, 2010
Applicants:
Sang-hun Jeon, Yongin-si, KR;
I-hun Song, Seongnam-si, KR;
Chang-jung Kim, Yongin-si, KR;
Sung-ho Park, Yongin-si, KR;
Inventors:
Sang-hun Jeon, Yongin-si, KR;
I-hun Song, Seongnam-si, KR;
Chang-jung Kim, Yongin-si, KR;
Sung-ho Park, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.