The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2013

Filed:

Jun. 14, 2011
Applicants:

Takashi Fujii, Kyoto-Fu, JP;

Kazuyuki Hirao, Nishikyo-Ku, JP;

Kanji Sakata, Shunan, JP;

Inventors:

Takashi Fujii, Kyoto-Fu, JP;

Kazuyuki Hirao, Nishikyo-Ku, JP;

Kanji Sakata, Shunan, JP;

Assignees:

Murata Manufacturing Co., Ltd., Nagaokakyo-Shi, Kyoto-fu, JP;

Tokuyama Corporation, Shunan-shi, Yamaguchi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 5/00 (2006.01); G02B 5/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An optical member made of polycrystalline silicon formed from high-purity trichlorosilane as a raw material, and that absorbs and scatters an infrared ray in a wavelength region of 4 μm or less. In the optical member, a ratio A/B between a transmittance A of an infrared ray having a wavelength of 4 μm and a transmittance B of an infrared ray having a wavelength of 10 μm is 0.9 or less, and an average crystal grain size of the polycrystalline silicon is 5 μm or less. This polycrystalline silicon is produced by hydrogen reducing SiHCIby heating a base material to 800 to 900° C. using a chemical vapor deposition method. In this way, an infrared ray transmissive optical member, a manufacturing method thereof, an optical device, an infrared detector, and an optical apparatus capable of sensing a human body with high sensitivity and accuracy are realized.


Find Patent Forward Citations

Loading…