The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
May. 27, 2011
Mehrdad M. Moslehi, Los Altos, CA (US);
Virendra V. Rana, Los Gatos, CA (US);
Jianjun Liang, Fremont, CA (US);
Pranav Anbalagan, San Jose, CA (US);
Mehrdad M. Moslehi, Los Altos, CA (US);
Virendra V. Rana, Los Gatos, CA (US);
JianJun Liang, Fremont, CA (US);
Pranav Anbalagan, San Jose, CA (US);
Solexel, Milpitas, CA (US);
Abstract
Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.