The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
May. 22, 2012
Yongxun Liu, Tsukuba, JP;
Takashi Matsukawa, Tsukuba, JP;
Kazuhiko Endo, Tsukuba, JP;
Shinichi Ouchi, Tsukuba, JP;
Kunihiro Sakamoto, Tsukuba, JP;
Meishoku Masahara, Tsukuba, JP;
Yongxun Liu, Tsukuba, JP;
Takashi Matsukawa, Tsukuba, JP;
Kazuhiko Endo, Tsukuba, JP;
Shinichi Ouchi, Tsukuba, JP;
Kunihiro Sakamoto, Tsukuba, JP;
Meishoku Masahara, Tsukuba, JP;
Abstract
A manufacturing method of the nano-wire field effect transistor, comprising steps of preparing an SOI substrate having a (100) surface orientation; processing a silicon crystal layer comprising the SOI substrate into a standing plate-shaped member having a rectangular cross-section; processing the silicon crystal layer by orientation dependent wet etching and thermal oxidation into a shape where two triangular columnar members are arranged one above the other with a spacing from each other so as to face along the ridge lines of the triangular columnar members; and processing the two triangular columnar members into a circular columnar member configuring a nano-wire by hydrogen annealing or thermal oxidation.