The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2013

Filed:

Jun. 30, 2010
Applicants:

Fuad Elias Doany, Katonah, NY (US);

Christopher Vincent Jahnes, Saddle River, NJ (US);

Clint Lee Schow, Ossining, NY (US);

Mehmet Soyuer, Stamford, CT (US);

Alexander V. Rylyakov, Mount Kisco, NY (US);

Inventors:

Fuad Elias Doany, Katonah, NY (US);

Christopher Vincent Jahnes, Saddle River, NJ (US);

Clint Lee Schow, Ossining, NY (US);

Mehmet Soyuer, Stamford, CT (US);

Alexander V. Rylyakov, Mount Kisco, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
Abstract

Fabricating a semiconductor chip with backside optical vias is provided. A silicon wafer is received for processing. The silicon wafer includes an optically transparent oxide layer on a frontside of the silicon wafer. A complementary metal-oxide-semiconductor layer is formed on top of the optically transparent oxide layer. A backside of the silicon wafer is etched to form optical vias in a silicon substrate using the optically transparent oxide layer as an etch-stop.


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