The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Oct. 27, 2009
Kazuyuki Yamae, Ikoma, JP;
Hiroshi Fukshima, Kadoma, JP;
Masaharu Yasuda, Takarazuka, JP;
Tomoya Iwahashi, Ibaraki, JP;
Hidenori Kamei, Kagoshima, JP;
Syuusaku Maeda, Kagoshima, JP;
Kazuyuki Yamae, Ikoma, JP;
Hiroshi Fukshima, Kadoma, JP;
Masaharu Yasuda, Takarazuka, JP;
Tomoya Iwahashi, Ibaraki, JP;
Hidenori Kamei, Kagoshima, JP;
Syuusaku Maeda, Kagoshima, JP;
Panasonic Corporation, Kadoma-shi, JP;
Abstract
A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.