The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2013

Filed:

Oct. 08, 2008
Applicants:

Tae-su Kim, Daejeon, KR;

Jae-jin Kim, Seoul, KR;

Hyun-woo Shin, Gwacheon-si, KR;

Inventors:

Tae-Su Kim, Daejeon, KR;

Jae-Jin Kim, Seoul, KR;

Hyun-Woo Shin, Gwacheon-si, KR;

Assignee:

LG Chem, Ltd., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for laser interference lithography using a diffraction grating includes (a) forming a photoresist layer on a work substrate to which a repeated fine pattern is to be formed; (b) forming a refractive index matching material layer on the photoresist layer; (c) forming on the refractive index matching material layer a diffraction grating layer having a period of diffraction grating within the range from λ/nto λ/n(λ is a wavelength of laser beam, nis a refractive index of the diffraction grating, and nis a refractive index in the air or in vacuum); and (d) exposing the photoresist layer by means of mutual interference of positive and negative diffracted lights with the same absolute value by inputting a laser beam perpendicularly to the diffraction grating layer. This method allows to realize an interference pattern with higher resolution and to use a laser source with lower coherence.


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