The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2013
Filed:
Nov. 24, 2010
Applicants:
Byoung-ho Kwon, Hwaseong-si, KR;
Bo-un Yoon, Seoul, KR;
Min-sang Kim, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device is provided. A pattern layer is formed on a substrate defined to include a main pattern region and a dummy pattern region. A preliminary main pattern and a preliminary dummy pattern may be formed by patterning the pattern layer so that an upper surface area of the preliminary dummy pattern facing away from a surface of the substrate is less than an entire area of the dummy pattern region that is be subjected to subsequent planarization. The preliminary main pattern and the preliminary dummy pattern are partially etched to form a main pattern and a dummy pattern.