The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8395745 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 12, 2013

Filed:

Mar. 16, 2012
Applicants:

Saishi Fujikawa, Kanagawa, JP;

Kunio Hosoya, Kanagawa, JP;

Inventors:

Saishi Fujikawa, Kanagawa, JP;

Kunio Hosoya, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1339 (2006.01);
U.S. Cl.
CPC ...
Abstract

When a columnar spacer is provided in a region overlapping with a TFT, there is a concern that pressure will be applied when attaching a pair of substrates to each other, which may result in the TFT being adversely affected and a crack forming. A dummy layer is formed of an inorganic material below a columnar spacer which is formed in a position overlapping with the TFT. The dummy layer is located in the position overlapping with the TFT, so that pressure applied to the TFT in a step of attaching the pair of substrates is distributed and relieved. The dummy layer is preferably formed of the same material as a pixel electrode so that it is formed without an increase in the number of processing steps.


Find Patent Forward Citations

Fujikawa, Saishi. (2013). Semiconductor device (U.S. Patent No. 8395745). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8395745

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