The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Sep. 29, 2010
Kazutoshi Ogawa, Hitachi, JP;
Katsumi Ishikawa, Hitachinaka, JP;
Kazutoshi Ogawa, Hitachi, JP;
Katsumi Ishikawa, Hitachinaka, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The threshold value for a normally-off junction FET is a low value. Accordingly, in a semiconductor driver circuit using the normally-off junction FET, there have existed such problems as high-accuracy voltage control, high-speed charging into an input capacitor, and misoperations. A semiconductor driver circuit which is the most suitable for the normally-off junction FET is proposed by applying the high-accuracy gate-voltage generation scheme based on a Zener diode, a reduction in the turn-on loss based on a speed-up capacitor, the connection of an inter-gate-source capacitor, and a misoperation-preventing circuit based on the source-terminal optimum implementation scheme.